The scope of this work was to develop robust 100A thermally grown SiO2 films and electrically characterize these films to establish process capability. One of the near term dielectric solutions proposed by the roadmap was investigated by implanting nitrogen into substrates, followed by thermal oxidation to form an oxynitride film. Electrical characterization was performed to quantify the performance of the oxynitride vs. the thermally grown SiO2 film.