A set of ironized cluster beam (ICB) deposited Ag/p-Si, Ag/n-Si and Pb/n-Si Shottky structures at 300 V and 600 V acceleration voltage is prepared and analyzed. For these structures, the current-voltage and capacitance voltage charcteristics are experimentaly determined. Measured capacitance spectra of ICB Shottky structures show pronounced nonideal behaviour as compared to ideal metal-semiconductor systems. A large peak in capacitance-voltage characteristics as well as distinct step-like nonideal feature in C$^{-2}$V plot are observed. A new model for the capacitance-voltage dependence is presented incorporating the explicit bias voltage dependence of the induced charge density at the interface between the metal enriched layer of the semiconductor due to the penetrating metal ions and semiconductor substrate. Explicit bias voltage dependence of the interface charge is described using the model function with few model parameters. The values of the model parameters are determined from fitting the model to the measured spectra. The presented model devised originally for the specific ICB Schottky structures istested also on some nonideal Schottky structures prepares by conventional methods. The suprisingly well description of such different capacitance spectra of the Schottky structures additionally confirms the devised model. Additionally, it is shown that the posibible extra charge at the interface arising from the quantum well states would in suitable appoximation follow the general functional dependence of the presented model. A simple, yet general microscopic description of the ICB metal semiconductor system is set up. The microscopic model is based on the description of the ideal metal-semiconductor interface in the tight binding appoximation. Using the known expressions for the metal and semiconductor surface Green functions a model for the ICB Schottky structure with the thin disordered semiconducting layer between the metal and the semiconductor is presented.